Crystal IS Inc. has pioneered groundbreaking Aluminum Nitride(AlN) substrates for use in discrete LED devices. What makes our approach so different is our unique patented processes first for growing these very low defect AlN substrates and secondly for growing the active crystal layers in a way which preserves the low defect densities of the substrates. These crystals (termed pseudomorphic epitaxial structures) exhibit sharp interfaces, smooth surfaces with surface roughness of less than 1.0 nanometers.

The result is an LED device which emits in the deep UV portion of the spectrum 250-270 with higher efficiencies and longer lifetime than diodes fabricated from other competing technologies such as crystals grown on sapphire. Our lifetimes regularly exceed 10,000 hours.