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Press Room
News
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October 1, 2007 - Crystal IS announces ATP Award.
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September 26, 2007 - Crystal IS announces new Vice President Engineering.
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July 21, 2007 - Crystal IS
makes key purchase.
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Aug 31, 2006 – Crystal IS raises
$10.6M in second round financing
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May 11, 2006 -
Crystal IS announces world's first low defect density 2-inch aluminum
nitride substrates to commercialize the AlN/AlGaN market.
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April 12,
2006 - Crystal IS Announces New Vice President.
Crystal IS announces Timothy Bettles as vice president, business
development, sales and marketing.
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February 23, 2006 - Crystal IS
Announces New CEO.
Dr. Ding Day joins Crystal IS as CEO.
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December
14, 2005 - Crystal IS Listed by Albany-Colonie Regional Chamber of
Commerce in Tech Valley's Hot 10.
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October 19, 2005 -
Crystal IS Ranked on Deloitte Technology Fast 500.
Crystal IS ranked 227th fastest growing technology company in North America. Read
the Albany Business Review article here.
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September 14, 2005 - Crystal
IS Announces New Vice President.
Joseph Smart appointed Vice President of Device Development.
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April 5, 2005 - Crystal
IS to Move to Larger Facility.
Crystal IS Announces Move to Larger Facility in Green Island, NY.
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March 31, 2005 - Top
Crystal IS Exec Honored for Presentation.
Leo Schowalter Recieves Award for 2005 Workshop Presentation in Miami, FL.
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February 1, 2005 - Crystal IS
Announces New Board Member.
Gerald Fine, Ph.D., appointed to the Crystal IS Board of Directors.
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January 25, 2005 - Crystal IS
Announces New Engineer.
Raj Shetty, Ph.D., appointed director of AlN Production.
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November 17, 2004 -
Crystal IS Announces Licensing Agreement with Cree
Crystal IS Announces
Intellectual Property Licensing Agreement with Cree.
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October 6, 2004 - Crystal
IS Wins NIST ATP Award
Crystal IS Wins U.S. Commerce Department
NIST ATP Award for Accelerated Development of Native Single Crystal
Aluminum Nitride Technology.
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September 28, 2004 -
Crystal IS Closes Series A Venture Funding Round
Crystal IS closed on $5M of Series A round venture funding. The
investor syndicate includes ARCH Venture Partners, JVP, 3i, Harris
& Harris Group, Inc., and local investor Walt Robb.
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August 11, 2004 - VP
Operations and Controller Join Crystal IS
David Usher, MS, appointed as Vice President of Operations and
Kathryn Good, CPA, appointed as Controller.
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May 3, 2004 - Crystal IS
Announces Continued DARPA Support
One-year funding extension to further improve native single crystal
aluminum nitride technology for applications to ultraviolet emitters
and RF transistors.
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April 28, 2004 - Dr. Leo Schowalter
presents at Blue 2004 in Taiwan
Dr. Leo Schowalter, co-founder, CEO and president of Crystal IS,
Inc., will present his company’s latest developments in native
single-crystal aluminum nitride (AlN) technology at Blue 2004: Advanced LEDs and Lasers,
which will be held in Hsinchu, Taiwan on May 10-12, 2004. Native AlN
has great potential to drive higher performance and lower costs for a
range of electronic and photonic device technologies; such potential
is supported by several recent materials and device developments
achieved by Crystal IS.
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March 26, 2004 - Crystal
IS Announces Two New SBIR Program Wins
Partnership with Albany NanoTech to speed development of epi-ready
substrates and high performance LEDs.
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November
13, 2003 - Crystal IS will have a significant presence at the
upcoming MRS Fall Meeting in Boston from December 1st through
December 5th.
Several company representatives will be available to discuss possible
R&D partnerships in materials and device development based on
native, single-crystal AlN substrates. At the conference, several
papers will be presented in Symposium Y: "GaN and Related
Alloys" that depict results on Crystal IS' AlN substrates. If
you would like to schedule discussion time at the conference please
contact Randy Gronewold at gronewold@crystal-is.com. To examine the
papers in Symposium Y, see http:// www.mrs.org/ meetings/ fall2003/ program/
ProgramBookY.pdf. For more information on Crystal IS, Inc.
visit our homepage.
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October 23, 2003 - Dr. Keith Evans presents at
Compound Semi Industry Outlook for 2004 in Dallas, TX
Dr. Keith Evans, Crystal IS COO and VP Business Development, will
join representatives from Cree, Sumitomo Electric, Rubicon, Kyma
Technologies, and Dow Corning at the Compound Semi Industry Outlook
for 2004 in a panel discussion of the present and future of
semiconductor substrate material markets. This year the event will be
held in Dallas, Texas, on December 15th, 16th, and
17th. Please visit COMPOUNDSEMI Online for details and
updates.
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September 22, 2003 - Crystal IS Continues to Fuel
Native Nitride Development
Diameter more than doubled; DARPA funded research paves way for
broad commercial acceptance.
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June 16, 2003 - Crystal IS Announces Participation in
DARPA SUVOS Program
Native aluminum nitride substrates may enable production of
compact deep ultraviolet emitters.
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May 23, 2003 - Crystal IS Announces Availability of
Single-Crystal Native Aluminum Nitride Substrates
Lowest defect density substrates now available in all primary
low-index orientations: A-plane, M-plane and C-plane.
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April 30, 2003 - Crystal IS wins Tech Valley Summit
$100,000 Business Plan Contest
Crystal IS was chosen from among five finalists by a panel of
prominent venture capitalists to win one of the richest contests in
the nation "The Business Review".
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February 26, 2003 - Crystal IS CEO co-chairs Compound
Semiconductor Outlook 2003 Conference
Dr. Schowalter is also seminar leader and is conducting the
pre-conference workshop on "New Approaches to Semiconductor
Substrates".
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Feature Articles
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May 2006 - published
paper pssa 203, 1667 - 2006.
Ultra-low dislocation density aluminum nitride is a very promising
substrate for many device structures based on the III–V
nitride system.
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February 2006 - AlN_EPR_WVU_
APL 88, 06112, 2006.
Single crystals of aluminum nitride (AlN) are excellent candidates
for use as substrates in the epitaxial production of III-nitride
electronic and optoelectronic devices.
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January 2006
- Surface acoustic wave velocity in Single-Crystal AlN substrates -
Bu, Ciplys, Shur, Schowalter, Schujman and Gaska - UFFC 53, p251,
2006.
The surface acoustic wave velocity has been measured on a-plane
(c-propagation) and c-plane oriented bulk aluminum nitride (AlN)
single crystals using the S11-parameter method in the frequency range
160–360 MHz.
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June 2004 -
Electromechanical coupling coefficient for surface acoustic waves in
single-crystal bulk aluminum nitride, Applied Physics Letters Volume
84, Number 18, pp. 4611-4613.
The electromechanical coupling coefficient K2 for
surface acoustic waves propagating on c and a surfaces
of bulk AlN single crystals has been measured using S11-parameter
method in the frequency range of 160-360 MHz.
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May 2004 -
Near-bandedge cathodoluminescence of an AlN homoepitaxial film,
Applied Physics Letters Volume 84, Number 18, pp. 3501-3503.
Cathodoluminescence experiments were performed on a high-quality AlN
epitaxial film grown by organometallic vapor phase epitaxy on a large
single crystal AlN substrate.
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February 2004 - Excitonic structure of bulk AlN
from optical reflectivity and cathodoluminescence measurements, Physical
Review B 71, 041201 (R) pp. 041201-1 - 041201-4.
Reflection measurements in the near-band-edge region of bulk AlN
crystals have been performed as a function of temperature.
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February
2004 - AlGaN-based ultraviolet light-emitting diodes grown on bulk
AlN substrates. Applied Physics Letters Volume 84, Number 6, pp.
1002-1003.
Confirmed potential of a bulk AlN substrate for high current
operation of nitride ultraviolet-light-emitting diodes (UV-LEDs). For
the high flux UV extraction from nitride UV-LEDs, transparency and
high thermal conductivity of the substrates are important issues. The
bulk AlN is one of the best candidates, because it satisfies
requirements above, and has the same crytallographic symmetry with
those of AlGa(In)N families, which is beneficial to the high-quality
crystal growth of the nitride device structures.
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December 2003 -
Fabrication of native, single-crystal AlN substrates, Physica Status
Solidi Volume 0, Issue 7, pp. 1997-2000.
Aluminum nitride (AlN) is a promising substrate material for emerging
wide-bandgap electronic and opto-electronic devices. Although
existing manufacturing technology is less mature than for sapphire
and silicon carbide substrates, aluminum nitride has been
demonstrated to be superior for deep UV lightemitting applications
and may ultimately surpass silicon carbide in both cost and
performance for high power RF.
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October 2003 - Photoluminescence of GaN deposited on
single-crystal bulk AlN with different polarities, Applied Physics
Letters Volume 83, Number 17, pp. 3507-3509.
Photoluminescence (PL) properties of two GaN epilayers grown in
identical conditions on substrates of Al face and N face of bulk
single-crystal AlN are studied in the temperature range from 8 to 300
K under weak cw excitation and strong pulsed excitation up to the
intensities when electron-hole heating and stimulated emission are
observed.
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February 2003 - AlGaN/GaN heterostructure
field-effect transistors on single-crystal bulk AlN, Applied Physics
Letters Volume 82, Issue 8, pp. 1299-1301
Report on the performance of AlGaN/GaN/AlN heterostructure
field-effect transistors (HFETs) grown over slightly-off c-axis,
single-crystal, bulk AlN substrates
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December
2002 - Deep-ultraviolet emission of AlGaN/AlN quantum wells on bulk
AlN, Applied Physics Letters Volume 81, Issue 24, pp. 4658-4660
An approach for growing high-quality AlGaN/AlN multiple quantum
wells (MQW) emitting in deep UV region is proposed.
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September 2002 - Successors to Sapphire in
the GaN Market, III - Vs Review, Vol 15 – No 7
Palo Alto Research Center (PARC) fabricated the world’s
first UVLED on AlN that was built on substrate material supplied by
Crystal IS, showing AlN’s commercial possibilities.
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April 2002 - PARC & Crystal IS Demonstrate UV
LEDs Grown on AlN Substrates
Palo Alto Research Center
(PARC) and Crystal IS have demonstrated the first UV LED grown on a
single-crystal AlN substrate. The device operates at 360nm and is
grown on a single-crystal (0-112) aluminum nitride substrate with a
Si-doped graded AlGaN layer.
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